STP11N60DM2 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STP11N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.420 Ω ID 10 A PTOT 110 W
* Fast-recovery body diode
* Extremely low gate charge and input capacitanc.

Application

* Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recove.

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters.

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