TAB TO-220 1 23 Order code VDS RDS(on) max. ID STP10NM60N 600 V 550 mΩ 10 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low .

* Switching applications G(1) S(3) Description AM01475v1_noZen This device is an N-channel Power MOSFET develope.

AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts