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STP10NB20FP - N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

Download the STP10NB20FP datasheet PDF. This datasheet also covers the STP10NB20 variant, as both devices belong to the same n - channel enhancement mode powermesh mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

Key Features

  • Type STP10NB20 STP10NB20FP VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 10 A 6A STP10NB20 STP10NB20FP Figure 1. Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP10NB20_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STP10NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP10NB50 N-CHANNEL Power MOSFET
STP10NB50FP N-CHANNEL Power MOSFET
STP10N10L N-Channel Enhancement Mode Low Threshold Power MOS Transistor
STP10N10LFI N-Channel Enhancement Mode Low Threshold Power MOS Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH™ MOSFET Table 1. General Features Type STP10NB20 STP10NB20FP VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 10 A 6A STP10NB20 STP10NB20FP Figure 1. Package FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.25 Ω ■ ■ ■ ■ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.