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STP10NB20 - N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

Key Features

  • Type STP10NB20 STP10NB20FP VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 10 A 6A STP10NB20 STP10NB20FP Figure 1. Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH™ MOSFET Table 1. General Features Type STP10NB20 STP10NB20FP VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 10 A 6A STP10NB20 STP10NB20FP Figure 1. Package FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.25 Ω ■ ■ ■ ■ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.