STL8N6LF6AG mosfet equivalent, n-channel power mosfet.
Order code
VDS RDS(on) max. ID PTOT
STL8N6LF6AG 60 V
27 mΩ
32 A 55 W
* Designed for automotive applications and AEC-Q101 qualified
* Very low on-resistance .
and AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low.
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STL8N6LF6AG
Table 1: Device summary
Marking
Pa.
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