This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.
Figure 1.
Key Features
Order code VDSS STL70N10F3 100 V
RDS(on) max @VGS=10V
0.0084 Ω
ID PTOT 16 A 136 W.
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STL70N10F3 N-channel 100 V, 0.0078 Ω, 16 A STripFET™ III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS STL70N10F3 100 V RDS(...
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sheet — production data Features Order code VDSS STL70N10F3 100 V RDS(on) max @VGS=10V 0.0084 Ω ID PTOT 16 A 136 W ■ Improved die-to-footprint ratio ■ Very low thermal resistance ■ Low on-resistance Applications ■ Switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram $$$$ Table 1.
STL70N10F3 Datasheet
