Order code VDSS RDS(on) max. ID PTOT 1 2 3 STL6N3LLH6 30 V
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* 0.025 Ω (VGS=10 V) 6 A 2.4W 0.04 Ω (VGS=4.5 V) 1 2 3 6 5 4 RDS(on) * Qg indust.

* Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) Switching application Description This device is an N-chan.

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. D S 6(D) 5(D) 4(S) AM11269v1 Table.

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