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STL66DN3LLH5 - Dual N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology.

The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.

Table 1.

Features

  • Type STL66DN3LLH5 VDSS 30 V RDS(on) max < 6.5 mΩ ID 20 A (1) 1 2 1. The value is rated according Rthj-pcb.
  • Logic level VGS(th) 175 °C junction temperature 3 4 PowerFLAT™ 5x6 double island.

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STL66DN3LLH5 Dual N-channel 30 V, 5.9 mΩ , 20 A STripFET™ V Power MOSFET in PowerFLAT™ 5x6 double island package Datasheet — production data Features Type STL66DN3LLH5 VDSS 30 V RDS(on) max < 6.5 mΩ ID 20 A (1) 1 2 1. The value is rated according Rthj-pcb ■ ■ Logic level VGS(th) 175 °C junction temperature 3 4 PowerFLAT™ 5x6 double island Applications ■ ■ Switching applications Automotive Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Top view Table 1.
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