Type STL66DN3LLH5 VDSS 30 V RDS(on) max < 6.5 mΩ ID 20 A (1) 1 2 1. The value is rated according Rthj-pcb
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* Logic level VGS(th) 175 °C junction temperature 3.

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* Switching applications Automotive Figure 1. Internal schematic diagram Description This device is an N-cha.

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Top view Table 1..

STL66N3LLH5

STL60N10F7

STL60N32N3LL

STL60NH3LL

STL60P4LLF6

STL6118

STL6118A

STL6119

STL6120E

STL6121

STL62P3LLH6

STL6340

STL6341

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