Order code STL64DN4F7AG VDS 40 V RDS(on) max. 8.5 mΩ ID 40 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 7 6 D1 5
* AEC-Q101 qualified
* Among the lowe.

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. NG14G.

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