Datasheet4U Logo Datasheet4U.com

STL57N65M5 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout.

Features

  • Order code STL57N65M5 VDS @ TJmax 710 V RDS(on) max. 0.069Ω ID 22.5 A.
  • Extremely low RDS(on).
  • Low gate charge and input capacitance.
  • Excellent switching performance.
  • 100% avalanche tested.

📥 Download Datasheet

Datasheet preview – STL57N65M5

Datasheet Details

Part number STL57N65M5
Manufacturer STMicroelectronics
File Size 798.83 KB
Description N-channel Power MOSFET
Datasheet download datasheet STL57N65M5 Datasheet
Additional preview pages of the STL57N65M5 datasheet.

📁 Similar Datasheet

  • STL50NH3LL - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STL51004x - (STL51004x / STL51005x) 1300 nm Laser in Coaxial Package (Siemens)
  • STL51005x - (STL51004x / STL51005x) 1300 nm Laser in Coaxial Package (Siemens)
  • STL51007X - 1300 nm Laser in Receptacle Package (Siemens Semiconductor)
  • STL5NK65Z - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STL-S3 - Stratum 3 Timing Module (Connor-Winfield)
  • STL-S3E - Stratum 3E Timing Module (Connor-Winfield)
  • STL03S03F - (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter (Superworld Electronics)
  • STL03S05F - (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter (Superworld Electronics)
  • STL03S09F - (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter (Superworld Electronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STL57N65M5 N-channel 650 V, 0.061 Ω typ., 22.5 A MDmesh™ M5 Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data 5 4 32 1 PowerFLAT™ 8x8 HV Figure 1: Internal schematic diagram Drain(5) Gate(1) Features Order code STL57N65M5 VDS @ TJmax 710 V RDS(on) max. 0.069Ω ID 22.5 A  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100% avalanche tested Applications  Switching applications Description This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency.
Published: |