Order code STL33N65M2 VDS 650 V RDS(on)max 0.154 Ω ID 20 A
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
* 100% avalanche test.

* Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology..

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for th.

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