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STL220N6F7 - N-channel Power MOSFET

Description

internal capacitance and gate charge for faster and more efficient switching.

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Datasheet Details

Part number STL220N6F7
Manufacturer STMicroelectronics
File Size 640.47 KB
Description N-channel Power MOSFET
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STL220N6F7 Datasheet N-channel 60 V, 1.2 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Order code VDS STL220N6F7 60 V • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness RDS(on ) max. 1.4 mΩ ID 120 A PowerFLAT 5x6 Applications D(5, 6, 7, 8) 8 76 5 • Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced G(4) trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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