Order code STL15N60M2-EP VDS @ TJmax RDS(on) max. ID PTOT 650 V 0.418 Ω 7 A 55 W
* Extremely low gate charge
* Excellent output capacitance (COSS) profile <.

* Switching applications
* Tailored for very high frequency converters (f > 150 kHz) Description This device is .

This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics with .

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