Order code VDS @ Tj max. RDS(on) max ID STL11N65M5 710 V 0.530 Ω 8.5 A
* Extremely low RDS(on)
* Low gate charge and input capacitance
* Excellent switch.

* Switching applications Figure 1. Internal schematic diagrams D(5, 6, 11, 12) GSSS 10 9 8 7 G(10) D 11 D 12 6.

This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts