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STL10N65M2 - N-channel Power MOSFET

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General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Order code STL10N65M2 Table 1: Device summary Marking Package 10N65M2 PowerFLAT™ 5x6 HV Packing Tape and reel March 2017 DocID030432 Rev 1 This is infor

Overview

STL10N65M2 N-channel 650 V, 0.85 Ω typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production.

Key Features

  • Order code STL10N65M2 VDS 650 V RDS(on) max. 1.00 Ω ID 4.5 A 1 2 3 4 PowerFLAT™ 5x6 HV Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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