Order code STL10N65M2 VDS 650 V RDS(on) max. 1.00 Ω ID 4.5 A 1 2 3 4 PowerFLAT™ 5x6 HV Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) .

* Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology..

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for th.

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