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STMicroelectronics Electronic Components Datasheet

STK22N05 Datasheet

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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STK22N05
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STK22N05
VDSS
50 V
R DS( on)
< 0.065
ID
22 A
s TYPICAL RDS(on) = 0.048
s AVALANCHE RUGGEDNESS TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
12
SOT-82
3
2
1
SOT-194
(option)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
ID M()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
December 1996
Value
50
50
± 20
22
15
88
65
0. 43
-65 to 175
175
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/10


STMicroelectronics Electronic Components Datasheet

STK22N05 Datasheet

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

No Preview Available !

STK22N05
THERMAL DATA
Rthj-case
Rthj- amb
Rthj- amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2.31
80
0.7
275
oC/ W
oC/ W
oC/ W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
22
100
25
15
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 20 V
Min.
50
Typ.
Max.
Unit
V
1
10
± 100
µA
µA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 11 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2
Typ.
2.9
0. 04 8
Max.
4
0. 065
Unit
V
22 A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 11 A
Min.
6
Typ.
10
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0
700 900
320 450
90 150
pF
pF
pF
2/10


Part Number STK22N05
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Maker ST Microelectronics
Total Page 10 Pages
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