STIPQ3M60T-HZS Datasheet | STMicroelectronics

STIPQ3M60T-HZS Key Features

IPM 3 A, 600 V, RDS(on) = 1.6 Ω, 3-phase Power MOSFET inverter bridge including control ICs for gate driving
Optimized for low electromagnetic interference
3.3 V, 5 V, 15 V CMOS/TTL input parators with hysteresis and pull-down/
Undervoltage lockout
Internal bootstrap diode
Interlocking function
Shutdown function
parator for fault protection against overtemperature and overcurrent
Op-amp for advanced current sensing
Optimized pinout for easy board layout