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STI70N10F4 - Power MOSFETs

General Description

This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance.

Figure 1.

Table 1.

Key Features

  • Type STI70N10F4.
  • VDSS 100 V RDS(on) max < 0.0165 Ω ID 65 A Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested I²PAK 3 12.

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www.DataSheet4U.com STI70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in I2PAK Features Type STI70N10F4 ■ ■ ■ VDSS 100 V RDS(on) max < 0.0165 Ω ID 65 A Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested I²PAK 3 12 Application ■ Switching applications Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Marking 70N10F4 Package I²PAK Packaging Tube Order codes STI70N10F4 September 2009 Doc ID 16292 Rev 1 1/12 www.st.com 12 Contents www.DataSheet4U.