STI150N10F7 mosfet equivalent, n-channel power mosfet.
Order codes STI150N10F7 STP150N10F7
VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM.
* Switching applications
Figure 1. Internal schematic diagram
' 7$%
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Description
These N-channel Power MOS.
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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