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STHU47N60DM6AG - N-channel Power MOSFET

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Features

  • Order code STHU47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A.
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.
  • Excellent switching performance thanks to the extra driving source pin Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS3456.

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Full PDF Text Transcription

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STHU47N60DM6AG Datasheet Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh DM6 Power MOSFET in an HU3PAK package TAB 7 1 HU3PAK Drain(TAB) Features Order code STHU47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving source pin Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTABZ Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.
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