STH80N10LF7-2AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STH80N10LF7-2AG VDS 100 V RDS(on) max. 10 mΩ
* AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)

Application

* Switching applications DTG1S23NZ Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with a.

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Produ.

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