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STH80N10LF7-2AG - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STH80N10LF7-2AG VDS 100 V RDS(on) max. 10 mΩ.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 80 A PTOT 110 W G(1) S(2, 3).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STH80N10LF7-2AG Datasheet Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in an H2PAK-2 package TAB 23 1 H2PAK-2 D(TAB) Features Order code STH80N10LF7-2AG VDS 100 V RDS(on) max. 10 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 80 A PTOT 110 W G(1) S(2, 3) Applications • Switching applications DTG1S23NZ Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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