STH275N8F7-6AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STH275N8F7-2AG STH275N8F7-6AG VDS RDS(on) max. ID 80 V 2.1 mΩ 180 A
* AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent.

Application

* Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced .

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order.

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