STH265N6F6-6AG mosfet equivalent, n-channel power mosfet.
Order code STH265N6F6-2AG STH265N6F6-6AG
VDS 60 V 60 V
RDS(on) max 2.1 mΩ 2.1 mΩ
ID 180 A 180 A
* Designed for automotive applications
* Very low on-resistanc.
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss
.
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S(2, 3) H2PAK-2
Order code STH265N6F6-2AG STH265N6F6-6AG
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