STH12N120K5-2AG datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS RDS(on) max. ID STH12N120K5-2AG 1200 V 1.9 Ω 7A
* AEC-Q101 qualified
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure .

Application

* Switching applications DTG1S23NZ Description This very high voltage N-channel Power MOSFET is designed using MDm.

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring super.

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