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STH10NC60FI - N-CHANNEL Power MOS MOSFET

Download the STH10NC60FI datasheet PDF. This datasheet also covers the STH10NC60 variant, as both devices belong to the same n-channel power mos mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Note: The manufacturer provides a single datasheet file (STH10NC60_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STH10NC60FI (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STH10NC60FI. For precise diagrams, and layout, please refer to the original PDF.

N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE STW10NC60 STH10NC60FI s s s s s STW10NC60 STH10NC60FI VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ...

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s s STW10NC60 STH10NC60FI VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 10 A 10 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-247 3 3 2 1 2 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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