STGWT40HP65FB datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* Maximum junction temperature: TJ = 175 °C
* Minimized tail current
* VCE(sat) = 1.6 V (typ.) @ IC = 40 A
* Tight parameter distribution
* Co-packed .

Application

* Power factor corrector (PFC) Description This device is an IGBT developed using an advanced proprietary trench gat.

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency.

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