STGW35NC120HD igbt equivalent, very fast igbt.
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Low on-losses Low on-voltage drop (VCE(sat)) High current capability High input impedance (voltage driven) Low gate charge Ideal for .
This IGBT utilizes the advanced PowerMESHâ„¢ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking GW35NC120HD Package TO-247 Packagin.
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