* Maximum junction temperature: TJ = 175 °C
* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
* Tight parameter distribut.

* Industrial drives
* UPS
* Solar
* Welding Description E(3) NG1E3C2T This device is an IGBT developed .

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the lo.

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