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STGW25M120DF3 - 1200V 25A low-loss M series IGBT

Description

NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • 10 μs of short-circuit withstand time.
  • Low VCE(sat) = 1.85 V (typ. ) @ IC = 25 A.
  • Tight parameter distribution.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Soft- and fast-recovery antiparallel diode G(1) C(2, TAB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGW25M120DF3 Datasheet Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package 3 2 1 TO-247 Features • Maximum junction temperature: TJ = 175 °C • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recovery antiparallel diode G(1) C(2, TAB) Applications • Industrial drives • UPS • Solar • Welding Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
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