STGP35N35LZ
Description
This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.
Key Features
- Designed for automotive applications and AEC-Q101 qualified
- Low threshold voltage
- Low on-voltage drop
- High voltage clamping feature
- Logic level gate charge
- ESD gate-emitter protection
- Gate and gate-emitter integrated resistors
