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STGP35N35LZ - IGBT

This page provides the datasheet information for the STGP35N35LZ, a member of the STGB35N35LZ IGBT family.

Description

This application specific IGBT utilizes the most advanced PowerMESH™ technology.

The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.

Features

  • Designed for automotive.

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STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ TAB 3 1 D²PAK TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram C (2 or TAB) G (1) RG RGE Datasheet - production data Features • Designed for automotive applications and AEC-Q101 qualified • Low threshold voltage • Low on-voltage drop • High voltage clamping feature • Logic level gate charge • ESD gate-emitter protection • Gate and gate-emitter integrated resistors Application • Automotive ignition Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.
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