STGP30M65DF2
Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Applications
- Motor control
- UPS
- PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum promise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Order code STGP30M65DF2
Table 1: Device summary
Marking
Package
G30M65DF2
TO-220
Packaging Tube
April 2015
Doc ID027355 Rev 2
This is information on a product in full production.
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Contents
Contents
1 Electrical ratings...
