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STGP30M65DF2 Datasheet STMicroelectronics

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STMicroelectronics · STGP30M65DF2 File Size : 524.32KB · 1 hits

Features and Benefits


• 6 µs of short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and very fast recovery antiparallel diode Applications
• Motor control
• UPS
• PFC Description This device is an IGBT developed using an a.

STGP30M65DF2 STGP30M65DF2 STGP30M65DF2
TAGS
Trench
gate
field-stop
IGBT
STGP30M65DF2
STGP30H60DF
STGP30H60DFB
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