STGP10H60DF Datasheet, STMicroelectronics

* High speed switching
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
* Short-circuit rated
* Ultrafast soft recovery.

* Motor control
* UPS
* PFC Description E(3) NG1E3C2T These devices are IGBTs developed using an advance.

E(3) NG1E3C2T These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to m.