STGF5H60DF igbt equivalent, igbt.
* High-speed switching
* Tight parameter distribution
* Safe paralleling
* Low thermal resistance
* Short-circuit rated
* Ultrafast soft recovery .
* Motor control
* UPS
* PFC
Description
These devices are IGBTs developed using an advanced proprietary tre.
These devices are IGBTs developed using an advanced proprietary trench gate fieldE(3) stop structure. These devices are part of the H series of IGBTs, which represents an
NG1E3C2T optimum compromise between conduction and switching losses to maximize.
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