STGF20M65DF2 igbt equivalent, igbt.
* High short-circuit withstand time
* VCE(sat) = 1.55 V (typ.) @ IC = 20 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resistance.
* Motor control
* UPS
* PFC
* General-purpose inverters
Description
This device is an IGBT developed usi.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the.
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