* High speed switching
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
* Short-circuit rated
* Ultrafast soft recovery.

* Motor control
* UPS, PFC Figure 1. Internal schematic diagram Description G (1) C (2, TAB) This device is.

G (1) C (2, TAB) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high fr.

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