STG35M120F3D7 igbt equivalent, igbt.
* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ.) @ IC = 35 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribut.
* Motor control
E
* Industrial drives
EGCD
* PFC
* UPS
* Solar
* General purpose inverter.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-c.
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