STFW8N120K5 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

3 2 1 Order code VDS RDS(on) max. STFW8N120K5 1200 V 2.00 Ω
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gat.

Application

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 G(1.

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 G(1) technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requirin.

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