STFW3N170 mosfet equivalent, n-channel power mosfet.
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VDS RDS(on) max. ID
PTOT
STFW3N170 1700 V
13 Ω
2.6 A 63 W
* Intrinsic capacitances and Qg minimized
* TO-3PF for higher creepage between leads <.
* Switching applications
Description
This Power MOSFET is designed using the STMicroelectronics consolidated strip-l.
This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Order code ST.
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