Datasheet Summary
N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFET in a TO-3PF package
- production data
TO-3PF
2 1
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STFW3N170 1700 V
13 Ω
2.6 A 63 W
- Intrinsic capacitances and Qg minimized
- TO-3PF for higher creepage between leads
- High speed switching
- 100% avalanche tested
Applications
- Switching applications
Description
This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of parable standard parts from other manufacturers.
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