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STFW3N170 - N-CHANNEL POWER MOSFET

General Description

This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process.

The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Key Features

  • Order code VDS RDS(on) max. ID PTOT STFW3N170 1700 V 13 Ω 2.6 A 63 W.
  • Intrinsic capacitances and Qg minimized.
  • TO-3PF for higher creepage between leads.
  • High speed switching.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STFW3N170 N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFET in a TO-3PF package Datasheet - production data TO-3PF 3 2 1 Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STFW3N170 1700 V 13 Ω 2.6 A 63 W  Intrinsic capacitances and Qg minimized  TO-3PF for higher creepage between leads  High speed switching  100% avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.