STFU15NM65N datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code STFU15NM65N VDS 650 V RDS(on) max 0.38 Ω ID 12 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance Ap.

Application

* Switching applications Description This device is an N-channel Power MOSFET developed using the second generation .

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.

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