Order code STFI10LN80K5 VDS 800 V RDS(on) max. 0.63 Ω ID 8A 1 23 I 2 PAKFP (TO-281) Figure 1: Internal schematic diagram D(2) G(1)
* Fully insulated and low prof.

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tech.

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.

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