STF9N60M2 mosfet equivalent, n-channel power mosfet.
Order codes
STF9N60M2 STFI9N60M2
VDS @ TJmax
RDS(on) max
ID
650 V 0.78 Ω 5.5 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Switching applications
Description
These devices are N-channel Power MOSFETs developed using a new generation of M.
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowes.
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