STF6N60M2 - N-channel Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STF6N60M2
Manufacturer	STMicroelectronics
File Size	1.06 MB
Description	N-channel Power MOSFET
Datasheet	STF6N60M2 Datasheet
Additional preview pages of the STF6N60M2 datasheet.

Product details

Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Features

Order codes STF6N60M2 STP6N60M2 STU6N60M2 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A.
Extremely low gate charge.
Lower RDS(on) x area vs previous generation.
Low gate input resistance.
100% avalanche tested.
Zener-protected.

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Published: Jul 7, 2015 |