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STF5N52U - N-Channel MOSFET

Description

diode.

Features

  • Order code VDS RDS(on) max. ID PTOT ct(s) 2 3 1 du TO-220FP ro D(2) STF5N52U 525 V.
  • Outstanding dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very low RDS(on).
  • Extremely low trr 1.50 Ω 4.4 A 25 W te P.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF5N52U Datasheet N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh™ Power MOSFET in a TO-220FP package Features Order code VDS RDS(on) max. ID PTOT ct(s) 2 3 1 du TO-220FP ro D(2) STF5N52U 525 V • Outstanding dv/dt capability • Gate charge minimized • Very low intrinsic capacitances • Very low RDS(on) • Extremely low trr 1.50 Ω 4.4 A 25 W te P Applications le • Switching applications o G(1) bs Description - O This device is N-channel Power MOSFET developed using UltraFASTmesh™ ) technology, which combines the advantages of reduced on resistance, Zener gate t(s S(3) AM15572v1_no_tab protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.
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