STF30N10F7 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Applications.

Application

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order .

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