STF26NM60N-H datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Type STF26NM60N-H
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* VDSS 600 V RDS(on) max < 0.165 Ω ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3.

Application

Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET ass.

Description

This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefor.

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