Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < .

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary MOS.

This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is t.

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