| Description | This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes STB24NM65N STI24NM65N STF24NM65N STP... |
| Features |
www.DataSheet4U.com Type
VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V
RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω
ID
3
STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N
19 A 19 A 19 A(1) 19 A 19 A
1
2
3 12
TO-220
3 1
I²PAK
D²PAK
3 1 2
1. Limited only by maximum temperature allowed ■ ■ ■ 2 1 3 100% avalanche tested Lo... |
| Datasheet |
 STF24NM65N Datasheet - 593.66KB |
