3 2 1 TO-220FP Figure 1. Internal schematic diagram ' * 6 $0Y Order code STF22NM60ND VDS @ TJmax 650 V RDS(on) max 0.22 Ω ID 17 A
* Designed f.

and AEC-Q101 qualified
* Fast-recovery body diode
* Low gate charge and input capacitance
* Low on-resistanc.

This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topol.

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