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STF21P6LLF6 - P-channel Power MOSFET

Description

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code VDS RDS(on) max. ID PTOT STF21P6LLF6 -60 V 28.5 mΩ -21 A 25 W.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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Full PDF Text Transcription

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STF21P6LLF6 P-channel -60 V, 25.5 mΩ typ., -21 A STripFET™ F6 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STF21P6LLF6 -60 V 28.5 mΩ -21 A 25 W  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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