Order code VDS RDS(on) max. ID PTOT STF21P6LLF6 -60 V 28.5 mΩ -21 A 25 W
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness

* Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 techno.

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STF21P6LLF6 Table 1: Device summary Marking Pa.

STF21N65M5

STF21N90K5

STF21NM50N

STF21NM60N

STF21NM60ND

STF201-22

STF201-30

STF202-22

STF202-22T1G

STF202-30

STF2045C

STF2060C

STF2060CR

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