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STF10NK60Z - N-CHANNEL MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Figure 1.

Key Features

  • Type STF10NK60Z(045Y) VDSS 600 V RDS(on) max ID Pw < 0.75 Ω 10 A 35 W.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very good manufacturing reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF10NK60Z(045Y) N-channel 600 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET Zener-protected TO-220FP narrow leads Custom data Features Type STF10NK60Z(045Y) VDSS 600 V RDS(on) max ID Pw < 0.75 Ω 10 A 35 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very good manufacturing reliability Application ■ Switching applications 3 2 1 TO-220FP narrow leads Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Figure 1. Internal schematic diagram Table 1.