STF100N6F7 Datasheet, STMicroelectronics

Order code STF100N6F7 VDS RDS(on) max. ID PTOT 60 V 5.6 mΩ 46 A 25 W   72)3 Figure 1. Internal schematic diagram ' *
* Among the lowest RDS(on) on th.

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 .

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